FinFET Technology and the Future of Semiconductor Devices
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Abstract
The continuous miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has been the primary driver of growth in the semiconductor industry. However, conventional planar transistors encounter serious physical limitations when their dimensions are reduced, including short-channel effects, leakage current, process variation and excessive power consumption. Fin field-effect transistor (FinFET) technology was introduced to address these limitations by replacing the planar channel with a thin vertical silicon fin surrounded by the gate on multiple sides. This three-dimensional structure gives the gate greater electrostatic control over the channel, reduces leakage and improves performance at lower operating voltages. FinFETs became the dominant transistor architecture for advanced integrated circuits and enabled the continuation of semiconductor scaling across several technology generations. They are extensively employed in processors, graphics chips, artificial-intelligence accelerators, mobile devices, automotive electronics and high-performance computing systems. Nevertheless, continued dimensional scaling introduces challenges involving fin geometry, parasitic resistance, self-heating, manufacturing variability and increasing fabrication cost. Consequently, the semiconductor industry is beginning to transition from FinFETs to gate-all-around nanosheet transistors, complementary FET structures and vertically stacked devices. This article examines the structure, operation, advantages, applications and limitations of FinFET technology and evaluates its position in the future development of semiconductor devices.
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References
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